2012
Journal Articles
Vertically stacked Si nanostructures for biosensing applications
Microelectronic Engineering. 2012. Vol. 97, p. 345-348. DOI : 10.1016/j.mee.2012.03.017.Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm
IEEE Electron Device Letters. 2012. Vol. 33, num. 9, p. 1225-1227. DOI : 10.1109/Led.2012.2203091.In-situ grown horizontal carbon nanotube membrane
Microelectronic Engineering. 2012. Vol. 97, p. 166-168. DOI : 10.1016/j.mee.2012.05.017.On the Static and Dynamic Behavior of the Germanium Electron-Hole Bilayer Tunnel FET
IEEE Transactions on Electron Devices. 2012. Vol. 59, num. 11, p. 2932-2938. DOI : 10.1109/Ted.2012.2211600.Understanding the Superlinear Onset of Tunnel-FET Output Characteristic
IEEE Electron Device Letters. 2012. Vol. 33, num. 11, p. 1523-1525. DOI : 10.1109/LED.2012.2212175.Phase-locked loop based on nanoelectromechanical resonant-body field effect transistor
Applied Physics Letters. 2012. Vol. 101, num. 15, p. 153116. DOI : 10.1063/1.4758991.Local volume depletion/accumulation in GAA Si nanowire junctionless nMOSFETs
IEEE Transactions on Electron Devices. 2012. Vol. 59, p. 3519-3526. DOI : 10.1109/TED.2012.2220363.Streched organic transistors maintain mobility on flexible substrates
Microelectronic Engineering. 2012. Vol. 98, p. 508-511. DOI : 10.1016/j.mee.2012.07.080.Organic half-wave rectifier fabricated by stencil lithography on flexible substrate
Microelectronic Engineering. 2012. Vol. 100, p. 47-50. DOI : 10.1016/j.mee.2012.07.110.RF MEMS Shunt Capacitive Switches Using AlN Compared to Si3N4 Dielectric
Journal of Microelectromechanical Systems. 2012. p. 1-12. DOI : 10.1109/JMEMS.2012.2203101.Study on dual-lateral-gate suspended-body single-walled carbon nanotube field-effect transistors
Solid-State Electronics. 2012. Vol. 74, p. 121-125. DOI : 10.1016/j.sse.2012.04.022.TCAD Simulation of SOI TFETs and Calibration of Non-local Band-to-Band Tunneling Model
Microelectronic Engineering. 2012. Vol. 98, p. 334-337. DOI : 10.1016/j.mee.2012.07.077.Multigate Buckled Self-Aligned Dual Si Nanowire MOSFETs on Bulk Si for High Electron Mobility
IEEE Transactions on Nanotechnology. 2012. Vol. 11, p. 902-906. DOI : 10.1109/TNANO.2012.2205401.La récolte d’énergie pour les micro et nanosystèmes autonomes
Journal ElectroSuisse. 2012. Vol. 6, p. 30-36.Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor
Applied Physics Letters. 2012. Vol. 100, num. 16, p. 163504. DOI : 10.1063/1.4704179.The electron–hole bilayer tunnel FET
Solid-State Electronics. 2012. Vol. 74, p. 85-90. DOI : 10.1016/j.sse.2012.04.016.Non-contact characterization of graphene surface impedance at micro and millimeter waves
Journal of Applied Physics. 2012. Vol. 111, p. 114908-7. DOI : 10.1063/1.4728183.Single Active Nanoelectromechanical Tuning Fork Front-End Radio-Frequency Receiver
Nanotechnology. 2012. Vol. 23, num. 22, p. 225501. DOI : 10.1088/0957-4484/23/22/225501.Self-Aligned Lateral Dual-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect Transistors
Applied Physics Letters. 2012. Vol. 100, p. 063103. DOI : 10.1063/1.3682085.Nanoelectronics: Ferroelectric devices show potential
Nature Nanotechnology. 2012. Vol. 7, p. 83-85. DOI : 10.1038/nnano.2012.10.Complementary Germanium Electron-Hole Bilayer Tunnel FET for Sub-0.5-V Operation
IEEE Electron Device Letters. 2012. Vol. 33, num. 2, p. 167-169. DOI : 10.1109/LED.2011.2175898.Nanomechanical Silicon Resonators with Intrinsic Tunable Gain and Sub-nW Power Consumption
ACS Nano. 2012. Vol. 6, num. 1, p. 256–264. DOI : 10.1021/nn203517w.A Novel Extraction Method and Compact Model for the Steepness Estimation of FDSOI TFET Lateral Junction
IEEE Electron Device Letters. 2012. Vol. 33, num. 2, p. 140-142. DOI : 10.1109/LED.2011.2174027.Conference Papers
Coulomb blockade in a granular material made of gold nanowires
2012. 12th IEEE International Conference on Nanotechnology (IEEE-NANO), Birmingham, United Kingdom, August 20-23, 2012. DOI : 10.1109/NANO.2012.6322047.Precise Alignment of Individual Carbon Nanotubes for Nanoelectronics
2012. 12th IEEE International Conference on Nanotechnology (IEEE-NANO). DOI : 10.1109/NANO.2012.6322187.Large-Scale Assembly of Tunable Resonant-Body Carbon Nanotube Transistors without Hysteresis
2012. IEEE International Electron Devices Meeting IEDM, San Francisco, USA, Dec 10-13, 2012. p. 15.3.1-15.3.4. DOI : 10.1109/IEDM.2012.6479047.Resonant-Body Silicon Nanowire Field Effect Transistor without Junctions
2012. 2012 IEEE International Electron Devices Meeting IEDM, San Francisco, USA, December 10-13, 2012. p. 15.2.1-15.2.4. DOI : 10.1109/IEDM.2012.6479046.Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance
2012. ESSDERC 2012 – 42nd European Solid State Device Research Conference, Bordeaux, France, 17-21 09 2012. p. 161-164. DOI : 10.1109/ESSDERC.2012.6343358.Gate-All-Around Buckled Dual Si Nanowire nMOSFETs on Bulk Si for Transport Enhancement and Digital Logic Application
2012. 38th International Conference on Micro and Nano Engineering (MNE), Toulouse, France, September 16-20, 2012.New Tunnel-FET Architecture with Enhanced Ion and Improved Miller Effect for Energy Efficient Switching
2012. 70th Device Research Conference, State College, PA, USA, June 18-20, 2012. p. 131-132. DOI : 10.1109/DRC.2012.6256999.High-Q 3D Embedded Inductors using TSV for RF MEMS Tunable Bandpass Filters (4.65-6.8 GHz)
2012. 42nd European Microwave Conference, Amsterdam, Netherlands, p. 822-825.Determination of minimum conductivity of graphene from contactless microwaves measurements
2012. IEEE NANO 2012 – 12th International Conference on Nanotechnology, Birmingham, UK, August, 20-23, 2012. DOI : 10.1109/NANO.2012.6322060.Accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-section and high uniaxial tensile strain
2012. p. 114-120. DOI : 10.1016/j.sse.2012.04.021.Self-Assembled Nano-Electro-Mechanical Tri-state Carbon Nanotube Switches for Reconfigurable Integrated Circuits
2012. IEEE MEMS 2012, Paris, Jan. 29-Feb. 2, 2012. p. 188-191. DOI : 10.1109/MEMSYS.2012.6170148.EPFL Infoscience