Publication List (1999-2011)

2011

Conference papers

  • J. Cao, W. A. Vitale, A. M. Ionescu, “Self-Assembled Nano-Electro-Mechanical Tri-state Carbon Nanotube Switches for Reconfigurable Integrated Circuits”, IEEE MEMS 2012, Paris, France, Jan. 29-Feb. 2, 2012.
  • M. Najmzadeh, D. Bouvet, W. Grabinski, A. M. Ionescu, “Local stressors to accommodate 1.2 to 5.6 GPa uniaxial tensile stress in suspended gate-all-around Si nanowire nMOSFETs by elastic local buckling”, IEEE ISDRS 2011 (biennial), University of Maryland, College Park, MD, USA, 7-9 Dec. 2011.
  • A. Biswas, W. Grabinski, C. Le Royer, S. S. Dan, A. M. Ionescu, “TCAD Simulation of SOI TFETs and Calibration of Non-local Band-to-Band Tunneling Model”, MNE 2011, 19-23 September, Berlin, Germany.
  • E. Buitrago, M. Fernandez-Bolaños, A. M. Ionescu, “Vertically Stacked Silicon Nanowires/Fin-Type Structures for Bio-Sensing Applications”, MNE 2011, 19-23 September, Berlin, Germany.
  • J. Cao, A. M. Ionescu, “An Improved Precise Positioning Method for Self-Assembly of Lateral-Gate Carbon Nanotube Field-Effect-Transistors”, MNE 2011, 19-23 September, Berlin, Germany.
  • H. Guerin, D. Tsamados, A. M. Ionescu, H. Le Poche, J. Dijon, “Horizontally and on-site grown Carbon Nanotube Membrane for Sensitive and Selective Gas Sensing”, MNE 2011, 19-23 September, Berlin, Germany.
  • S. T. Bartsch, D. Grogg, A. Lovera, D. Tsamados, A. M. Ionescu, “Very high frequency double-ended tuning fork nanomechanical FinFET resonator”, Digest of Technical Papers of the 16th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2011, Beijing, China, June 5-9th 2011.
  • J. Cao, A. M. Ionescu, “Self-Aligned Double-Gate Suspended-Body Carbon Nanotube Field-Effect transistors For RF Applications”, Transducers 2011, Beijing, China, June 5-9th 2011.
  • L. De Michielis, L. Lattanzio, P. Palestri, L. Selmi, A. M. Ionescu, “Tunnel-FET Architecture with Improved Performance due to Enhanced Gate Modulation of the Tunneling Barrier”, DRC 2011, Santa Barbara, California, USA, 20-22 June 2011.
  • M. Najmzadeh, D. Bouvet, W. Grabinski, A. M. Ionescu, “Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs”, DRC 2011, Santa Barbara, California, USA, 20-22 June 2011.
  • J. Cao, A. M. Ionescu, “Lateral Gate Suspended-Body Carbon Nanotube Field-Effect-Transistors with Sub-100nm Air Gap by Precise Positioning Method”, DRC 2011, Santa Barbara, California, USA, 20-22 June 2011.
  • L. Lattanzio, L. De Michielis, A. M. Ionescu, “Electron-Hole Bilayer Tunnel FET for Steep Subthreshold Swing and Improved ON Current”, ESSDERC 2011, 12-16 September 2011, Helsinki, Finland.
  • J. Cao, A. M. Ionescu, “Self-Aligned Double-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect-Transistors”, ESSDERC 2011, 12-16 September 2011, Helsinki, Finland.
  • M. Najmzadeh, D. Bouvet, W. Grabinski, A. M. Ionescu, “Accumulation-Mode GAA Si NW nFET with Sub-5 nm cross-section and high uniaxial tensile strain”, ESSDERC 2011, 12-16 September 2011, Helsinki, Finland.
  • J. Cao, A. M. Ionescu, “Self-Assembly of Doubly-Clamped/Cantilevered Carbon Nanotube Arrays by a Precise Positioning Method”, NT 2011, Cambridge, UK, July 11-16, 2011.
  • J. Cao, A. M. Ionescu, “Self-Aligned Back-Gated Suspended Body Single-Walled Carbon Nanotube Field-Effect-Transistors Fabricated by High-Precision Positioning Method”, VLSI-TSA 2011, Hsinchu, Taiwan, April 25-27, 2011.
  • L. De Michielis, M. Iellina, P. Palestri, A. M. Ionescu, L. Selmi, “Tunneling path impact on semi-classical numerical simulations of TFET devices”, ULIS 2011, Cork, Ireland, 14-16th March 2011.

 

Journal papers

  • S. T. Bartsch, A. Lovera, D. Grogg and A. M. Ionescu, “Nanomechanical Silicon Resonators with Intrinsic Tunable Gain and Sub-nW Power Consumption”, in ACS Nano, doi:10.1021/nn203517w, 2011.
  • J. Cao , C. Nyffeler, K. Lister, A. M. Ionescu, “Resist-Assisted Assembly of Single-Walled Carbon Nanotube Devices with Nanoscale Precision”, Carbon, DOI:10.1016/j.carbon.2011.12.006, Available online 8 December 2011.
  • A. M. Ionescu, H. Riel, “Tunnel field-effect transistors as energy-efficient electronic switches”, Nature, vol. 479, iss. 7373, pp. 329-337, doi:10.1038/nature10679, November 2011.
  • S. S. Dan, A. Biswas, W. Grabinski, C. Le Royer, A. M. Ionescu, “A Novel Extraction Method and Compact Model for the Steepness Estimation of FDSOI TFET Lateral Junction”, IEEE Electron Device Letters, vol. 33, iss. 2, DOI:10.1109/LED.2011.2174027, available online January 2012.
  • L. De Michielis, M. Iellina, P. Palestri, A. M. Ionescu, L. Selmi, “Tunneling path impact on semi-classical numerical simulations of TFET devices”, accepted for publication in Solid State Electronics.
  • L. Lattanzio, A. Biswas, L. De Michielis, A. M. Ionescu, “Abrupt Switch based on Internally Combined Band-To-Band and Barrier Tunneling Mechanisms”, special issue of Solid State Electronics, 65-66 (2011) 234-239, November 2011.
  • G. A. Salvatore, L. Lattanzio, D. Bouvet, A. M. Ionescu, “Modeling the temperature dependence of Fe-FET static characteristics based on Landau’s theory”, IEEE Transactions on Electron Devices, vol. 58, no. 9, pp. 3162-3169, September 2011.
  • J. Perruisseau-Carrier, F. Bongard, M. Fernandez-Bolaños, A. M. Ionescu, “A Microfabricated 1-D Metamaterial Unit Cell Matched from DC to Millimeter-waves”, IEEE Microwave and Wireless Components Letters, vol. 21 (9), pp. 456-458, September 2011.
  • M. Fernandez-Bolaños, P. Nicole, A. M. Ionescu, “RF-MEMS switches with AlN dielectric and their applications”, International Journal of Microwave and Wireless Technologies, DOI: 10.1017/S175907871100064X, June 2011.
  • L. Lattanzio, A. Biswas, L. De Michielis, A. M. Ionescu, “A tunneling Field-Effect Transistor exploiting internally combined Band-to-Band and barrier tunneling mechanisms”, Applied Physics Letters, vol. 98, iss. 12, 123504, March 2011.
  • N. V. Cvetkovic, K. Sidler, V. Savu, J. Brugger, D. Tsamados, A. M. Ionescu, “Three-level stencil alignment fabrication of a high-k gate stack organic thin film transistor”, Corrected Proof, available online 10. January 2011, Microelectronic Engineering.
  • S. Rigante, L. Lattanzio, A. M. Ionescu, “FinFET for high sensitivity ion and biological sensing applications”, Microelectronic Engineering, vol. 88, no. 8, pp. 1864-1866, January 2011.
  • A. Arun, H. Le Poche, T. Idda, D. Acquaviva, M. Fernandez-Bolaños, P. Pantigny, P. Salet and A. M. Ionescu, “Tunable MEMS capacitors using vertical carbon nanotube arrays grown on metal lines”, Nanotechnology, 22, 025203, January 2011.
  • H. Andersson, Al. Rusu, A. Manuilskiy, S. Hallera, S. Ayöz and H.-E. Nilsson, “System of nano-silver inkjet printed memory cards and PC card reader and programmer”, Microelectronics Journal, vol. 42, iss. 1, pp. 21-27, January 2011.
     

Invited presentations

  • A. M. Ionescu, L. De Michielis, N. Dagtekin, G. Salvatore, J. Cao, A. Rusu, S. Bartsch, “Ultra Low Power: Emerging Devices and their Benefits for Integrated Circuits”, IEDM 2011, Washington, DC, USA, Dec. 5-7, 2011.
     

2010

Conference papers

  • S. T. Bartsch, D. Grogg, A. Lovera, D. Tsamados, S. Ayöz, A. M. Ionescu, “Resonant-Body Fin-FETs with sub-nW power consumption”, IEDM 2010, San Francisco, USA, 06-08 December 2010.
  • Al. Rusu, G. A. Salvatore, D. Jiménez, A. M. Ionescu, “Metal-Ferroelectric-Metal-Oxide-Semiconductor Field Effect Transistor with Sub-60mV/decade Subthreshold Swing and Internal Voltage Amplification”, IEDM 2010 , San Francisco, USA, 06-08 December 2010.
  • A. M. Ionescu, G. Salvatore, L. Lattanzio, “Beyond CMOS devices as enablers of future energy efficient integrated circuits and systems,” 4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium – 218th ECS Meeting, pp. 73-76, October 2010.
  • D. Acquaviva, D. Tsamados, A. M. Ionescu, “CNT Array Capacitive MEM Switches for Reconfigurable Interconnects” ,EuMW 2010, 26. September – 01. October, Paris, France.
  • N. V. Cvetkovic, K. Sidler, V. Savu, J. Brugger, D. Tsamados, A. M. Ionescu, “Three-level stencil alignment fabrication of a High-k Gate Stack Organic Thin Film Transistor”, MNE 2010, 19-22 September, Genoa, Italy.
  • G. A. Salvatore, L. Lattanzio, D. Bouvet, Al. Rusu, A. M. Ionescu, “Temperature sensor based on Ferroelectric FET”, MNE 2010, 19-22 September, Genoa, Italy.
  • M. Hermersdorf, C. Hibert, D. Grogg, A. M. Ionescu, “High Aspect Ratio Sub-Micron Trenches on Silicon-On-Insulator and Bulk Silicon”, MNE 2010, 19-22 September, Genoa, Italy.
  • J. Cao, A. Arun, A. M. Ionescu, “Floating-Potential Self-Assembly of Singe-Walled Carbon Nanotube Transistors by Ac-Dielectrophoresis”, MNE 2010, 19-22 September, Genoa, Italy.
  • S. Rigante, L. Lattanzio, A. M. Ionescu, “FinFET for high sensitivity ion and biological sensing applications”, MNE 2010, 19-22 September, Genoa, Italy.
  • Al. Rusu, G. A. Salvatore, A. M. Ionescu, “Test Structure and Method for the Experimental Investigation of Internal Voltage Amplification and Surface Potential of Ferroelectric MOSFETs”, ESSDERC 2010, 13-17 September 2010, Sevilles, Spain.
  • K. Boucart, W. Riess, A. M. Ionescu, “A Simulation-based Study of Sensitivity to Parameter Fluctuations of Silicon Tunnel FETs”, ESSDERC 2010, 13-17 September 2010, Sevilles, Spain.
  • L. Lattanzio, L. De Michielis, A. Biswas, A. M. Ionescu, “Abrupt Switch based on Internally Combined Band-To-Band and Barrier Tunneling Mechanisms”, ESSDERC 2010, 13-17 September 2010, Sevilles, Spain.
  • A. Lovera, S. Bartsch, D. Grogg, S. Ayöz, R. Kaunisto, A. M. Ionescu, “Active NEM Filters for Communications ApplicationsBased on Vibrating Body Transistors”, ESSDERC 2010, 13-17 September 2010, Sevilles, Spain.
  • G. A. Salvatore, L. Lattanzio, D. Bouvet, A. M. Ionescu, “The Curie Temperature as a Key Design Parameter of Ferroelectric Field Effect Transistors”, ESSDERC 2010, 13-17 September 2010, Sevilles, Spain.
  • D. Acquaviva, A. Arun, S. Esconjauregui, J. Cao, R. Smajda, D. Bouvet, A. Magrez, L. Forro, J. Robertson, A. M. Ionescu, “NEMS Devices Based on Dense Arrays of Carbon Nanotubes for RF Applications”, Diamond 2010, Budapest, Hungary, 5-9 September, 2010.
  • A. Vasylchenko, M. Fernández-Bolaños, S. Brebels, W. De Raedt and G. A. E. Vandenbosch, “Conformal Phased Array for a Miniature Wireless Sensor Node”, ICECom 2010, Dubrovnik, Croatia, September 2010.
  • J. Cao, A. Arun, K. Lister, D. Acquaviva, J. Bhandari, A. M. Ionescu, “Wafer Level Assembly of Single-Walled Carbon Nanotube (SWCNT) Arrays with Precise Positioning”, Nanotech 2010, Anaheim, CA, USA, 21-25 June, 2010.
  • D. Grogg, A. Lovera, A. M. Ionescu, “Nano-Electro-Mechanical Vibrating Body FET Resonator for High Frequency Integrated Oscillators”, DRC 2010, South Bend, IN, USA, 21-23 June, 2010.
  • L. Lattanzio, G. A. Salvatore, A. M. Ionescu, “Non-Hysteretic Ferroelectric Tunnel FET with Improved Conductance at Curie Temperature”, DRC 2010, South Bend, IN, USA, 21-23 June, 2010.
  • D. Acquaviva, A. Arun, S. Esconjauregui, J. Cao, R. Smajda, D. Bouvet, A. Magrez, L. Forro, J. Robertson, A. M. Ionescu, “RF NEM Capacitive Switch Based on Dense Horizontal Arrays of CNTs”, DRC 2010, South Bend, IN, USA, 21-23 June, 2010.
  • P. Nicole, J. Pagazani, M. Feral, P. Lartigues, P. Couderc, W. De Raedt, S. Brebels, E. Beyne, A. M. Ionescu, M. Fernandez-Bolaños, M. Gologanu, C. Bostan, C. Cobianu, “Demonstrations of Wireless Autonomous Sensors for Aeronautical Applications”, SSI 2010, Como, Italy, 23-24 March 2010.
  • L. Lattanzio, L. De Michielis, G. A. Salvatore, D. Bouvet, K. Boucart, A. M. Ionescu, “Ferroelectric Tunnel FET with a SiO2/Al2O3/P(VDF-TrFE) gate stack”, ULIS 2010, Glasgow, Scotland, UK, 17-19 March 2010.
  • A. Arun, M. Goffman, D. Grogg, T. Idda, P. Salet, A. M. Ionescu, “Tunable Electromechanical Resonator based on Carbon Nanotube Arry Suspended Gate Field Effect Transistor”, MEMS 2010, Hong Kong, China, 24-28 January 2010.

Journal papers

  • A. M. Ionescu, L. Lattanzio, G. A. Salvatore, L. De Michielis, K. Boucart, D. Bouvet, “The Hysteretic Ferroelectric Tunnel FET”,  IEEE Transactions on Electron Devices, vol. 57, iss. 12, pp. 3518-3524, December 2010.
  • M. Fernandez-Bolaños, C. Dehollain, P. Nicole, A. M. Ionescu, “Tunable Band-Stop Filter Based on Single RF MEMS Capacitive Shunt Switch with Meander Arm Inductance”, Solid-State Electronic Journal, vol. 54, iss. 9, pp. 1033-1040, September 2010.
  • H. Andersson , Al. Rusu , A. Manuilskiy, S. Haller, S. Ayoz, H.-E. Nilsson, “System of nano-silver inkjet printed memory cards and PC card reader and programmer”, article in press, Corrected Proof, Available online 18 September 2010, Microelectronics Journal, In Press, 2010.
  • G. A. Salvatore, L. Lattanzio, D. Bouvet, I. Stolichnov, N. Setter, A. M. Ionescu, “Ferroelectric transistors with improved characteristics at high temperature”, Applied Physics Letters, vol. 97, iss. 5, 053503, August 2010.
  • D. Tsamados, N. V. Cvetkovic, K. Sidler, J. Bhandari, V. Savu, J. Brugger, A. M. Ionescu, “Double-gate pentacene thin-film transistor with improved control in subthreshold region”, Solid State Electronics, vol. 54, iss. 9, pp. 1003-1009, September 2010.
  • L. De Michielis, L. Selmi, A. M. Ionescu, “A quasi-analytical model for nanowire FETs with arbitrary polygonal cross section”, Solid State Electronics, vol. 54, iss. 9, pp. 929-934, September 2010.
  • M. Najmzadeh, K. Boucart, W. Riess, A. M. Ionescu, “Asymmetrically strained all-silicon multi-gate n-Tunnel FETs”, Solid State Electronics, vol. 54, iss. 9, pp. 935-941, September 2010.
  • K. Sidler, N. V. Cvetkovic, V. Savu, D. Tsamados, A. M. Ionescu, J. Brugger, “Organic Thin Film Transistors on Flexible Polyimide Substrates Fabricated by Full Wafer Stencil Lithography”, Sensors and Actuators A: Physical, 2010.
  • M. Bopp, P. Coronel, C. Hibert, A. M. Ionescu, “3D stacked arrays of fins and nanowires on bulk silicon”, Microelectronic Engineering 2010, vol. 87, iss. 5-8, 1348-1351, May-August 2010.
  • A. Arun, D. Acquaviva, M. Fernández-Bolaños, P. Salet, H. Le-Poche, P. Pantigny, T. Idda, A. M. Ionescu, “Carbon nanotube vertical membranes for electrostatically actuated micro-electro-mechanical devices”, Microelectronic Engineering 2010, vol. 87, iss. 5-8, 1281-1283, May-August 2010.
  • M. Fernandez-Bolanos, A. Vasylchenko, P. Dainesi, S. Brebels, W. De Raedt, G. A. E. Vandenbosch, A. M. Ionescu, “Dipole antenna and distributed MEMS phase shifter fully integrated in a single wafer process for beam steering applications”, Microelectronic Engineering, vol. 87, iss. 5-8, pp. 1290-1293, May-August 2010.  
  • M. Najmzadeh, L. De Michielis, D. Bouvet, P. Dobrosz, S. Olsen, A. M. Ionescu, “Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs”, Microelectronic Engineering, vol. 87, iss. 5-8, pp. 1561-1565, May-August 2010.  
  • G. D. Nessim, D. Acquaviva, M. Seita, K. P. O’Brien, C. V. Thompson, “The Critical Role of the Underlayer Material and Thickness in Growing Vertically Aligned Carbon Nanotubes and Nanofibers on Metallic Substrates by Chemical Vapor Deposition”, Advanced Functional Materials, vol. 20, iss. 8, pp. 1306-1312, April 2010.
  • K. E. Moselund, M. Najmzadeh, P. Dobrosz, S. H. Olsen, D. Bouvet, L. De Michielis, V. Pott, A. M. Ionescu, “The high-mobility bended n-channel silicon nanowire transistor”, IEEE Transactions on Electron Devices, vol. 57, iss. 4, pp. 866-876, April 2010.
  • A. M. Ionescu, “Electronic devices: Nanowire transistors made easy”, Nature Nanotechnology, vol. 5, iss. 3, pp. 178 – 179, March 2010. [link]  
  •  

Invited presentations

  •  M. Fernández-Bolaños, A. M. Ionescu, Heterogeneous Integration for Novel Functionality, IEEE 3D System Integration Conference 2010 – 3DIC Munich, November 2010 (keynote)
     

2009

Conference papers

  • D. Grogg, S. Ayoz, A. M. Ionescu, “Self-sustained low power oscillator based on vibrating body field effect transistor”, IEDM 2009, Baltimore, USA, 07-09 December 2009.
  • M. Fernández-Bolaños, T. Lisec, C. Dehollain, D. Tsamados, P. Nicole, A. M. Ionescu, “Highly Tunable Band-Stop Filters Based on AlN RF MEM Capacitive Switches with Inductive Arms and Zipping Capacitive Coupling”, IEDM 2009, Baltimore, USA, 07-09 December 2009.
  • Al. Rusu, G. A. Salvatore, A. M. Ionescu, “A study of polarization effects in metal-ferroelectric-oxide-semiconductor capacitors”, CAS 2009, Sinaia, Romania, 12-14 October 2009.
  • J. Bhandari, M. Vinet, T. Poiroux , J. M. Sallese , B. Previtali, S. Deleonibus, A. M. Ionescu, “Investigation of bias-dependent series resistances and barrier height in Double Gate Schottky MOSFETs”, SOI 2009, San Francisco, USA, 05-08 October 2009.
  • M. Fernández-Bolaños, A. Vasylchenko, P. Dainesi, S. Brebels, W. De Raedt, G. A. E. Vandenbosch, A. M. Ionescu, “Dipole Antenna and Distributed MEMS Phase Shifter fully Integrated in a Single Wafer Process for Beam Steering Applications”, MNE 2009, Ghent, Belgium, 28 September – 01 October 2009.
  • A. Arun, M. Fernández-Bolaños, P. Salet, H. Le- Poche, P. Pantigny, T. Idda, A. M. Ionescu, “Carbon Nanotubes Vertical Membranes for Electrostatically Actuated Micro-Electro-Mechanical Devices”, MNE 2009, Ghent, Belgium, 28 September – 01 October 2009.
  • M. Najmzadeh, L. De Michielis, D. Bouvet, P. Dobrosz, S. Olsen, A. M. Ionescu, “Silicon nanowires with lateral uniaxial tensile stress profiles for high mobility gate-all-around MOSFETs”, MNE 2009, Ghent, Belgium, 28 September – 01 October 2009.
  • Al. Rusu, G. A. Salvatore, A. M. Ionescu, “An experimental investigation of the surface potential in ferroelectric P(VDF-TrFE) FETs”, MNE 2009, Ghent, Belgium, 28 September – 01 October 2009.
  • M. Fernández-Bolaños, C. Dehollain, S. Ayöz, P. Nicole, A. M. Ionescu, “Center Frequency and Bandwidth Tunable Bandpass Filter based on RF MEMS (10GHz- 14GHz)”, EuMC 2009, Rome, Italy, 28 September – 02 October 2009.
  • S. B. Constant, P. Nicole, M. Labeyrie, C. Renard, C. Fourdin, E. Minoux, A. Ziaei, M. Fernandez-Bolanos, A. M. Ionescu, A. Phommahaxay, G. Lissorgues, “X-band MEMS technology for integrated Radar modules”, EuMC (EuRAD) 2009, Rome, Italy, 30 September – 02 October 2009.
  • D. Grogg, S. Ayöz, D. Tsamados, A. M. Ionescu, “Small Signal Modeling of Charge and Piezoresistive Modulations in Active MEM Resonators”, ESSDERC 2009, Athens, Greece, 14-18 September 2009.
  • L. De Michielis, L. Selmi, A. M. Ionescu, “A model for robust electrostatic design of nanowire FETs with arbitrary polygonal cross sections”, ESSDERC 2009, Athens, Greece, 14-18 September 2009.
  • N. V. Cvetkovic, D. Tsamados, K. Sidler, J. Bhandari, V. Savu, J. Brugger, A. M. Ionescu, “Double-gate pentacene TFTs with improved control in subthreshold region”, ESSDERC 2009, Athens, Greece, 14-18 September 2009.
  • K. Boucart, W. Riess, A. M. Ionescu, “Asymmetrically Strained All-Silicon Tunnel Fets Featuring 1V Operation”, ESSDERC 2009, Athens, Greece, 14-18 September 2009.
  • A. Arun, D. Acquaviva, M. Fernández-Bolaños, P. Salet, H. Le-Poche, T. Idda, R. Smajda, A. Magrez, L. Forro, A. M. Ionescu, “Micro-Electro-Mechanical Capacitors Based on Vertical Carbon Nanotube Arrays”, ESSDERC 2009, Athens, Greece, 14-18 September 2009.
  • M. Fernández-Bolaños, C. Dehollain, P. Nicole, A. M. Ionescu, “Tunable Band-Stop Filter Based on Single RF MEMS Capacitive Shunt Switch with Meander Arm Inductance”, ESSDERC 2009, Athens, Greece, 14-18 September 2009.
  • G. A. Salvatore, L. Lattanzio, D. Bouvet, A. M. Ionescu, “An Experimental Study of Temperature Influence on Electrical Characteristics of Ferroelectric P(VDF-TrFE) FETs on SOI”, ESSDERC 2009, Athens, Greece, 14-18 September 2009.
  • D. Acquaviva, A. Arun, R. Smajda, D. Grogg, A. Magrez, T. Skotnicki, A. M. Ionescu, “Micro-Electro-Mechanical Switch Based on Suspended Horizontal Dense Mat of CNTs by FIB Nanomanipulation”, Eurosensors 2009, Lausanne, Switzerland, 06-09 September 2009.
  • K. Sidler, N. V. Cvetkovic, V. Savu, D. Tsamados, A. M. Ionescu, J. Brugger, “Organic Thin Film Transistors on Flexible Polyimide Substrates Fabricated by Full Wafer Stencil Lithography”, Eurosensors 2009, Lausanne, Switzerland, 06-09 September 2009.
  • A. Arun, M. Fernández-Bolaños, P. Salet, T. Idda, R. Smajda, A. Magrez, L. Forro, A. M. Ionescu, “Carbon Nanotubes Brush Varactor”, MEMSWAVE 2009, Trento, Italy, 06-08 July 2009.
  • M. Najmzadeh, D. Bouvet, P. Dobrosz, S. Olsen, A. M. Ionescu, “Investigation of oxidation-induced strain in a top-down Si nanowire platform”, INFOS 2009 (biennial conference, oral presentation), Cambridge, UK, 28 June-1 July 2009.
  • F. Lo Conte, D. Grogg, A. M. Ionescu, M. Kayal, “High-quality factor MEMS based oscillator”, MIXDES 2009, Lodz, Poland, 25-27 June 2009.
  • D. Acquaviva, A. Arun, R. Smajda, P. Y. Pfirter, A. Magrez, T. Skotnicki, A. M. Ionescu, “Effect of the Catalyst Patter Design and Buffer Layer Thickness on Carbon Nanotubes Selectivity, Alignment Orientation and Length by Fast Heating Water Assisted Thermal CVD”, Nanotube 2009 (NT09), Beijing, China, 21-26 June 2009.
  • A. Arun, M. Fernández-Bolanos, P. Salet, A. M. Ionescu, “Tunable RF MEMS Capacitor based on vertical carpets of carbon nanotubes”, INC5 2009, Los Angeles, USA, 18-21 May 2009.
  • D. Grogg, A. M. Ionescu, “Sub-100μW Low Power Operation of Vibrating Body FETs”, VLSI – TSA 2009, Hsinchu, Taiwan, 27-29 April 2009.
  • L. De Michielis, K. E. Moselund, D. Bouvet, P. Dobrosz, S. Olsen, A. O’Neill, L. Lattanzio, M. Najmzadeh, L. Selmi, A. M. Ionescu, “Optimization of the Channel Lateral Strain Profile for Improved Performance of Multi-Gate MOSFETs”, VLSI – TSA 2009, Hsinchu, Taiwan, 27-29 April 2009.
  • D. Grogg, F. Lo Conte, M. Kayal, A. M. Ionescu, “9 MHz Vibrating Body FET Tuning Fork Oscillator”, EFTF – IFCS 2009, Besan?on, France, 20-24 April 2009.
  • M. Fernández-Bolaños, D. Tsamados, P. Dainesi, A. M. Ionescu, “Reliability of RF MEMS Capacitive Switches and Distributed MEMS Phase Shifters using AlN Dielectric”, MEMS 2009, Sorrento, Italy, 25-29 January 2009.
  • D. Acquaviva, D. Tsamados, Ph. Coronel, T. Skotnicki, A. M. Ionescu. “Microelectromechanical Metal-Air-Insulator-Semiconductor (MEM-MAIS) Diode: A Novel Hybrid Device for ESD Protection”, MEMS 2009, Sorrento, Italy, 25-29 January 2009.


Journal papers

  • J. Bhandari, M. Vinet, T. Poiroux , J. M. Sallese , B. Previtali, S. Deleonibus, A. M. Ionescu, “Investigation of bias-dependent series resistances and barrier height in Double Gate Schottky MOSFETs”, SOI Conference, 2009 IEEE International,  October 2009.  
  • F. Lo Conte, D. Grogg, A. M. Ionescu, M. Kayal , “Silicon 9 MHz MEMS based oscillator with low phase noise and high quality factor”, Electronics and Telecommunications Quarterly,  vol. 55, iss. 4, pp. 77-89, 2009.  
  • R. Gysel, I. Stolichnov, A. K. Tagantsev, S. W. E. Riester, N. Setter, G. A. Salvatore, D. Bouvet, A. M. Ionescu, “Retention in Non-Volatile Silicon Transistors with an Organic Ferroelectric Gate”, Applied Physics Letters, vol. 94, iss. 26, 263507, July 2009.  
  • A. Arun, P. Salet, A. M. Ionescu, “A Study of Deterministic Positioning of Carbon Nanotubes by Dielectrophoresis”, Journal of Electronic Materials, vol. 38, no. 6, pp. 742-749, June 2009.  
  • M. Najmzadeh, D. Bouvet, P. Dobrosz, S. Olsen, A. M. Ionescu, “Investigation of oxidation-induced strain in a top-down Si nanowire platform”, Microelectronic Engineering, vol. 86, iss. 7-9, pp. 1961-1964, July – September 2009.
  • K. Boucart, W. Riess, A. M. Ionescu, “Lateral Strain Profile as Key Technology Booster for All-Silicon Tunnel FETs” IEEE Electron Device Letters, vol. 30, iss. 6, pp. 656 – 658, June 2009.
  • M. Bopp, P. Coronel, J. Bustos, C. Pribat, P. Dainesi, T. Skotnicki, A. M. Ionescu, “Silicon nanostructuring for 3D bulk silicon versatile devices”, Microelectronic Engineering, vol. 86, iss. 4-6, pp. 885 – 888, April – June 2009.
  • E. Colinet, C. Durand, L. Duraffourg, P. Audebert, G. Dumas, F. Casset, E. Ollier, P. Ancey, J.-F. Carpentier, L. Buchaillot, A. M.  Ionescu, “Ultra-Sensitive Capacitive Detection Based on SGMOSFET Compatible With Front-End CMOS Process”, IEEE Journal of Solid-State Circuits, vol. 44, iss. 1, pp. 247 – 257, January 2009.
  • D. Acquaviva, D. Bouvet, D. Tsamados, P. Coronel, T. Skotnicki, A. M. Ionescu, “Micro-electro-mechanical (MEM) diode switch”, Microelectronic Engineering, In Press, Corrected Proof, vol. 86, iss. 4-6, pp. 1074 – 1077, April – June 2009.
  • D. Grogg, H. C. Tekin, N. D. Ciressan-Badila, D. Tsamados, M. Mazza, A. M. Ionescu, “Bulk Lateral MEM Resonator on Thin SOI With High-Q Factor”, Journal of Microelectromechanical Systems, vol. 18, no. 2, pp. 466 – 479, 2009.


Invited presentations

2008

Conference papers

  • D. Grogg, M. Mazza, D. Tsamados, A. M. Ionescu, “Multi-Gate Vibrating-Body Field Effect Transistors (VB-FETs)”, IEDM 2008, San Francisco, USA, 15-17 December 2008. (Finalist in the IEDM 2008 Student Best Paper Award)
  • G. A. Salvatore, D. Bouvet, A. M. Ionescu, “Demonstration of Subthrehold Swing Smaller Than 60 mV/decade in Fe-FET with P(VDF-TrFE)/SiO2 Gate Stack”, IEDM 2008, San Francisco, USA, 15-17 December 2008.
  • M. Fernández-Bolaños, T. Lisec, P. Dainesi, A. M. Ionescu, ”Thermally Stable Distributed MEMS Phase Shifter for Airborne and Space Applications”, EuMC 2008, Amsterdam, NL, October 2008.
  • A. Arun, P. Salet, A. M. Ionescu, “SWCNT/MWCNT Crossed Junction by Two-Step Dielectrophoresis”, ESSDERC 2008, 15-19 September 2008, Edinburgh, Scotland, UK.
  • G. A. Salvatore, D. Bouvet, I. Stolitchnov, N. Setter, A. M. Ionescu, “Low Voltage Ferroelectric FET with sub-100nm Copolymer P(VDF-TrFE) Gate Dielectric for Non-Volatile 1T Memory”, ESSDERC 2008, 15-19 September 2008, Edinburgh, Scotland, UK.
  • V. Pott, K. E. Moselund and A. M. Ionescu, ”Non-hysteretic punchthrough impact ionization MOS (PIMOS) transistor: application to abrupt inverter and NDR circuits”, ESSDERC 2008, 15-19 September 2008, Edinburgh, Scotland, UK.
  • D. Grogg, C. Meinen, D. Tsamados, H. C. Tekin, M. Kayal and A. M. Ionescu, ”Double Gate Movable Body Micro-Electro-Mechanical FET as Hysteretic Switch: Application to Data Transmission Systems”, ESSDERC 2008, 15-19 September 2008, Edinburgh, Scotland, UK.
  • M. Najmzadeh, K. E. Moselund, P. Dobrosz, S. Olsen, A. O’Neill, A. M. Ionescu, “Investigation of Strain Profile Optimization in Gate-All-Around Suspended Silicon Nanowire FET”, Fringe poster session, ESSDERC 2008, 15-19 September 2008, Edinburgh, Scotland, UK.
  • D. Acquaviva, G. Salvatore, D. Bouvet, D. Tsamados, P. Coronel, T. Skotnicki, A. M. Ionescu, “Micro-Electro-Mechanical Metal-Air-Insulator-Semiconductor Diode Switch”, 34th International Conference on Micro- and Nano-Engineering, MNE 2008, 15-19 September 2008, Athens, Greece.
  • M. Bopp, P. Coronel, J. Bustos, C. Pribat, P. Dainesi, T. Skotnicki, A. M. Ionescu, ”Silicon Nanostructuring for 3D Bulk Silicon Versatile Devices”, MNE 2008, 15-19 September 2008, Athens, Greece.
  • M. Fernández-Bolaños, P. Dainesi, A. M. Ionescu, ”High-Isolation Shunt-Series MEMS Switch for a Wide Frequency Range (6-40GHz)”, MEMSWAVE, 30 June – 03 July 2008, Heraklion, Greece.
  • D. Grogg, H. C. Tekin, N. D. Badila-Ciressan, M. Mazza, D. Tsamados, A. M. Ionescu, ”Laterally vibrating-body double gate MOSFET with improved signal detection”, DRC 2008, 23-25 June 2008, Santa-Barbara, USA.
  • D. Grogg, H. C. Tekin, N. D. Badila-Ciressan, D. Tsamados, M. Mazza, A. M. Ionescu, ”Nano-Gap High Quality Factor Thin Film SOI MEM Resonators”, NANOTEC 2008, 01-05 June, Boston, USA.
  • A. Arun, P. Salet, A. M. Ionescu, “Trapping Individual Carbon Nanotubes”, Electronic Materials Conference, 25-27 June 2008, Santa Barbara, US.
  • M. Bopp, P. Coronel, F. Judong, K. Jouannic, A. Talbot, D. Ristoiu, C. Pribat, N. Bardos, F. Pico, M.P. Samson, P. Dainesi, A. M. Ionescu and T. Skotnicki, ”3D Nanostructured Silicon Relying on Hard Mask Engineering for High Temperature Annealing (HME-HTA) Processes for Electronic Devices”, NANOTEC 2008, 01-05 June 2008, Boston, US.
  • N. V. Cvetkovic, D. Tsamados, K. Sidler, J. Brugger, A. M. Ionescu, “Pentacene – SiO2 Interface: Role of the Environment Prior to Pentacene Deposition and its Impact on TFT DC Characteristics”, IEEE MIEL Conference, 11-14 May 2008, Nis, Serbia.
  • G. A. Salvatore, D. Bouvet, M. A. Ionescu, S. Riester, I. Stolichnov, R. Gysel, N. Setter, “1T memory cell based on PVDF-TrFE Field Effect Transistor”, MRS 2008, 24-28 March 2008, San Francisco, USA.
  • Y. S. Chauhan, D. Tsamados, N. Abele, C. Eggimann, M. Declercq, A. M. Ionescu, “Compact Modeling of Suspended Gate FET”, IEEE Conference on VLSI Design 2008, Hyderabad, India, Jan. 2008. (Honorable Mention Award)
  • K. E. Moselund, V. Pott, D. Bouvet, A. M. Ionescu, ”Hysteretic inverter-on-a-body-tied-wire based on less-than-10mV/decade abrupt punch-through impact ionization MOS PIMOS switch”, International Symposium on VLSI Technology, Systems and Applications (2008 VLSI-TSA), 21-23 April 2008, Taiwan.
  • K. E. Moselund, V. Pott, C. Meinen, D. Bouvet, M. Kayal, A. M. Ionescu, ”DRAM based on hysteresis in impact ionization single-transistor-latch”, MRS Spring Meeting, 24-28 March 2008, San Francisco, USA.
  • D. Molinero, N. Abele, L. Castaner, et al., “Oxide charging and memory effects in suspended-gate FET”, IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2008), 13-17 January 2008, Tucson, USA.
     

Journal papers

  • J. Bhandari, M. Vineta, T. Poirouxa, B. Previtalia, B. Vincenta, L. Hutina, J.P. Barnesa, S. Deleonibusa, A. M. Ionescu, “Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)”, Materials Science and Engineering, vol. 154-155, pp. 114-117, December 2008.
  • F. Balestra, E. Parker, D. Leadley, S. Mantl, E. Dubois, O. Engstroma, R. Clerc, S. Cristoloveanu, H. Kurz, J. P. Raskin, M. Lemmea, A. M. Ionescu, K. E. Moselund, K. Boucart, E. Kasper, A. Karmous, M. Baus, B. Spangenberg, M. Ostling, E. Sangiorgi, G. Ghibaudo, D. Flandre, “NANOSIL network of excellence – silicon-based nanostructures and nanodevices for long-term nanoelectronics applications”, Materials Science in Semiconductor Processing, December 2008.
  • M. H. B. Jamaa, K. E. Moselund, D. Atienza, D. Bouvet, A. M. Ionescu, Y. Leblebici, G. De Micheli, “Variability-Aware Design of Multilevel Logic Decoders for Nanoscale Crossbar Memories”, IEEE Transactions on Computer-Aided Design of Iintegrated Circuits and Systems, vol. 27, iss. 11, pp. 2053-2067, November 2008.
  • V. Pott, K. E. Moselund, D. Bouvet, L. De Michielis, A. M. Ionescu, “Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon”, IEEE Transactions on Nanotechnology, vol. 7, iss. 6, pp. 733-744, November 2008.
  • M. Fernández-Bolaños, T. Lisec, P. Dainesi, A. M. Ionescu, “Thermally stable distributed MEMS phase shifter for airborne and space applications,” 38th European Microwave Conference, Proceeding of, pp. 100-103, October 2008.
  • D. Tsamados, Y. S. Chauhan, C. Eggimann, et al., “Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters”, Solid-State Electronics, vol. 52, iss. 9, pp. 1374-1381, September 2008.
  • K. E. Moselund, D. Bouvet, A. M. Ionescu, “Abrupt NMOS inverter based on punch-through impact ionization with hysteresis in the voltage transfer characteristics”, IEEE Electron Device Letters,  vol. 29, iss. 9, pp. 1059-1061, September 2008.
  • K. Boucart, A. M. Ionescu, ”A new definition of threshold voltage in Tunnel FETs”, Solid-State Electronics, vol. 52, iss. 9, pp. 1318-1323, September 2008.
  • K. E. Moselund, D. Bouvet, V. Pott, C. Meinen, M. Kayal, A. M. Ionescu, ”Punch-through impact ionization MOSFET (PIMOS): From device principle to applications”, Solid-State Electronics, vol. 52, iss. 9, pp. 1336-1344, September 2008.
  • N. D. Badila-Ciressan, M. Mazza, D. Grogg, A. M. Ionescu, ”Nano-Gap Micro-Electro-Mechanical Bulk Lateral Resonators with High Quality Factors and Low Motional Resistances on Thin Silicon-On-Insulator”, Solid State Electronics, vol. 52, iss. 9, pp. 1394-1400, September 2008.
  • D. Grogg, N. D. Badila-Ciressan, A. M. Ionescu, “Focussed ion beam based fabrication of micro-electro-mechanical resonators”, Microsystem Techologies Microand Nanosystems Information Storage and Processing Systems, vol. 14, iss. 7, pp. 1049-1053, July 2008.
  • C. Durand, F. Casset, P. Renaux, N. Abelé, B. Legrand, D. Renaud, E. Ollier, P. Ancey, A. M. Ionescu, L. Buchaillot, “In-plane silicon-on-nothing nanometer-scale resonant suspended gate MOSFET for In-IC integration perspectives”, IEEE Electron Device Letters, vol. 29, iss. 5, pp. 494-496, May 2008.
  • K. E. Moselund, D. Bouvet, M. H. Ben Jamaa, D. Atienza, Y. Leblebici, G. De Micheli, A. M. Ionescu, ”Prospects for Logic-On-A-Wire”, special edition of Microelectronic Engineering, vol. 85, iss. 5-6, pp. 1406-1409, May 2008.
  • N. V. Cvetkovic, D. Tsamados, K. Sidler, J. Brugger, A. M. Ionescu, “Pentacene – SiO2 Interface: Role of the Environment Prior to Pentacene Deposition and its Impact on TFT DC Characteristics”, 26th International Conference On Microelectronics (MIEL 2008), Proceedings of, vol. 1, pp. 295-297, May 2008.
  • M. Fernández-Bolaños, J. Perruisseau-Carrier, P. Dainesi, A. M. Ionescu, ”RF MEMS Capacitive Switch on Semi-Suspended CPW using Low-Loss High-Resistivity Silicon Substrate”, Microelectronic Engineering, vol. 85, pp. 1039-1042, Feb. 2008.
  • K. Akarvardar, C. Eggimann, D. Tsamados, Y. S. Chauhan, G. C. Wan, A. M. Ionescu, R. T. Howe, H.-S. P. Wong, “Analytical Modeling of the Suspended-Gate FET and Design Insights for Low Power Logic”, IEEE Transactions on Electron Devices, vol. 51, no. 1, pp. 48-59, January 2008.


Invited presentations

  • A. M. Ionescu, ”Nanoelectronic switches with better than 60mV/decade subthreshold swing”, TransAlp’Nano, 27-28 October 2008, Lyon, France.
  • A. M. Ionescu, ”Future Paths for Components & Systems”, ICT 2008, Lyon, France  [-> more info]
  • A. M. Ionescu, ”Hybrid NEMS-CMOS: technological platforms, devices and applications”, Nanomechanics for NEMS: scientific and technological issues, 26-27 June 2008, Minatec Grenoble, France.
  • A. M. Ionescu, ”New Functionality and Ultra Low Power: Key Opportunities for the Post-CMOS Era”, Invited presentation at International Symposium on VLSI Technology, Systems and Applications, 2008 VLSI-TSA, 21-23 April 2008, Taiwan. (invited)
  • A. M. Ionescu, “NEMS: opportunities and challenges”, Design Automation and Test in Europe, 2008 DATE, 14 March, Munich DE.
  • A. M. Ionescu, ”Nanoelectronics roadmap: evading Moore’s law”, EWME 2008 – 7th European Workshop on Microelectronics Education, 28-30 May, BME – Budapest HU.
  • A. M. Ionescu, ”NEMS and CMOS co-integration”, OMT international workshop on Nanomechanics for NEMS: scientific and technological challenges, 26-27 June, Grenoble FR.
  • A. M. Ionescu, ”Small slope switches”, Nanoscale CMOS and Si-based Beyond CMOS Nanodevices, 28 June – 4 July, Autrans-Grenoble FR. (tutorial)
  • A. M. Ionescu, “NEMS: from ideas to reality check”, MEMSWAVE Symposium 2008, 2-4 July, Crete GR.
  • A. M. Ionescu, “From MEMS to NEMS: challenges and opportunities”, XXIXth URSI (INTERNATIONAL UNION OF RADIO SCIENCE) General Assembly, 9-16 August 2008, Chicago USA.
     

2007

Conference papers

  • K. E. Moselund, P. Dobrosz, S. Olsen, V. Pott, A. O’Neill, L. De Michielis, D. Tsamados, D. Bouvet, A. O’Neill, A. M. Ionescu, ”Bended gate-all-around nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress”, to be presented at the IEEE International Electron Device Meeting, IEDM 2007, Washington DC, USA, 2007.
  • K. Boucart, A. M. Ionescu, “Threshold voltage in Tunnel FETs: physical definition, extraction, scaling and impact on IC design”, Proceedings of the 37th European Solid-State Devices Research Conference, ESSDERC 2007, pp. 299-302, Munich, Germany, 11-13 Sept. 2007.
  • K. E. Moselund, V. Pott, D. Bouvet, A. M. Ionescu, ”Abrupt current switching due to impact ionization effects in W-MOSFET on low doped bulk silicon”, Proceedings of the 37th European Solid-State Devices Research Conference, ESSDERC 2007, pp. 287-290, Munich, Germany, 11-13 Sept. 2007.
  • D. Tsamados, Y. S. Chauhan, C. Eggimann, K. Akarvardar, H.-S. P. Wong, A. M. Ionescu, ”Numerical and analytical simulations of Suspended Gate – FET for ultra-low power inverters”, Proceedings of the 37th European Solid-State Devices Research Conference, ESSDERC 2007, pp. 167-170, Munich, Germany, 11-13 Sept. 2007.
  • Y. S. Chauhan, R. Gillon, M. Declercq, A. M. Ionescu, ”Impact of lateral non-uniform doping and hot carrier degradation on capacitance behavior of High Voltage MOSFETs”, Proceedings of the 37th European Solid-State Devices Research Conference, ESSDERC 2007, pp. 426-429, Munich, Germany, 11-13 Sept. 2007.
  • N. D. Badila-Ciressan, M. Mazza, D. Grogg, A. M. Ionescu, ”Fragmented membrane MEM bulk lateral resonators with nano-gaps on 1.5um SOI”, Proceedings of the 37th European Solid-State Devices Research Conference, ESSDERC 2007, pp. 430-433, Munich, Germany, 11-13 Sept. 2007.
  • M. H. Ben Jamaa, K. E. Moselund, D. Atienza, D. Bouvet, A. M. Ionescu, Y. Leblebici, G. De Micheli, ”Fault Tolerant Multi-Level Logic Decoder for Nanoscale Crossbar Memory Arrays”, Technical Digest of ICCAD, San Jose USA, pp. 765-772, 2007.
  • M. Fernández-Bolaños, J. Perruisseau-Carrier, P. Dainesi, A. M. Ionescu, “RF MEMS Capacitive Switch on Semi-Suspended CPW using Low-Loss High-Resistivity Silicon Substrate”, 33rd International Conference on Micro- and Nano-Engineering, MNE 2007, pp. 171-172, Copenhagen, Denmark, 23-26 Sept. 2007.
  • K. E. Moselund, D. Bouvet, A. M. Ionescu, “Prospect for Logic-on-a-wire: Omega-gate NMOS Inverter Fabricated on Single Si Nanowire”, 33rd International Conference on Micro- and Nano-Engineering, MNE 2007, pp. 123-124, Copenhagen, Denmark, 23-26 Sept. 2007.
  • D. Grogg, D. Tsamados, N. D. Badila-Ciressan, A. M. Ionescu ”Integration of MOSFET Transistors in MEMS Resonators for improved output detection”, Digest of Technical Papers of the 14th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2007, Lyon, France, vol. 2, pp. 1709-1712, June 10-14, 2007.
  • D. Grogg, N. D. Badila-Ciressan, A. M. Ionescu, “Fabrication of MEMS Resonators in Thin SOI”, Proceedings of the 2007 Symposium on Design, Test, Integration and Packaging of MEMS / MOEMS, DTIP 2007, Stresa, Italy, April 2007.
  • N. Abelé, D. Grogg, C. Hibert, F. Casset, P. Ancey, A. M. Ionescu, “0-level Vacuum Packaging RT Process for MEMS Resonators”, Proceedings of the 2007 Symposium on Design, Test, Integration and Packaging of MEMS / MOEMS, DTIP 2007, Stresa, Italy, April 2007.
  • Y. S. Chauhan, F. Krummenacher, R. Gillon, B. Bakeroot, M. Declercq, A. M Ionescu, ”A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling”, 20th International Conference on VLSI Design, VLSI 2007, pp. 177-182, Bangalore, India, 6-10 Jan. 2007.
  • K. Akarvardar, C. Eggimann, D.Tsamados, Y. S. Chauhan, G. C. Wan, A. M. Ionescu, H.-S. P. Wong, ”Analytical Modeling of the Suspended-Gate FET and Design Insights for Digital Logic”, 65th Device Research Conference, DRC 2007, South Ben, Indiana, 18-20 June 2007.
  • V. Pott, K. E. Moselund, D. Bouvet, A. M. Ionescu, ”Gate-all-around and Omega-gate MOSFET on bulk silicon”, 7th International Workshop on Future Information Processing Technologies, IWFIPT Workshop, Dresden, Germany, 4-7 Sept. 2007.
  • V. Pott, A. Heeren, K. E. Moselund, M. Fleischer, D. Kern, A. M. Ionescu, ”Gate-all-around silicon nanowires for hybrid CMOS / Single Electron Transistor Applications – in the framework of the SINANO European Network of Excellence”, International Nanotechnology Conference on Communication and Cooperation, INC3 2007, Brussels, Belgium, 16-19 Apr. 2007.
  • K. E. Moselund, D. Bouvet, Y. Leblebici, H. Ben Jamaa, D. Atienza, G. De Micheli, A. M. Ionescu, “GAA MOSFET for logic on a wire”, International Nanotechnology Conference on Communication and Cooperation, INC3 2007, Brussels, Belgium, 16-19 Apr. 2007.
  • M. Fernández-Bolaños, P. Dainesi, A.M. Ionescu, “RF MEMS Switches ang DMTL for wideband (5-30GHz) space and wireless applications”, 3D IC Technology Symposium, Eindhoven, The Netherlands, 4 Oct. 2007.


Journal papers

  • A. M. Ionescu, K. E. Moselund, ”Beyond CMOS: Challenges and Opportunities Major trends in microelectronics for the coming decades”, Revue de l’Electricité et de l’Electronique, REE, Vol. 8, pp. 134-145, September 2007.
  • K. Boucart, A. M. Ionescu, “Double-Gate Tunnel FET With High-k Gate Dielectric”, IEEE Transactions on Electron Devices, vol. 54, no. 7, pp. 1725-1733, July 2007.
  • K. Boucart, A. M. Ionescu, “Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric”, Solid-State Electronics, vol. 51, iss. 11-12, pp. 1500-1507, Nov.-Dec. 2007.
  • K. E. Moselund, D. Bouvet, L. Tschuor, V. Pott, P. Dainesi, C. Eggimann, N. Le Thomas, R. Houdré, A. M. Ionescu, ”Cointegration of Gate-All-Around MOSFETs and local silicon-on-insulator optical waveguides on bulk silicon”, IEEE Transactions on Nanotechnology, vol. 6 (1), pp. 118-125, 2007.
  • N. D. Badila Ciressan, C. Hibert, M. Mazza, A. M. Ionescu, “Fabrication of silicon-on-insulator MEM resonators with deep sub-micron transduction gaps”, Microsystem Technologies, vol. 13, issue 11, pp. 1489-1493, May 2007.
  • Y. S. Chauhan, F. Krummenacher, R. Gillon, B. Bakeroot, M. J. Declercq, A. M. Ionescu, ”Compact Modeling of Lateral Nonuniform Doping in High-Voltage MOSFETs”, IEEE Transactions on Electron Devices, vol. 54, no. 6, pp. 1527-1539, June 2007.
  • Y. S. Chauhan, R. Gillon, B. Bakeroot, F. Krummenacher, M. Declercq, A. M. Ionescu, “An EKV-based High Voltage MOSFET Model with improved mobility and drift model”, Solid State Electronics, vol. 51, iss. 11-12, pp. 1581-1588, Nov.-Dec. 2007.


Invited presentations

  • A. M. Ionescu, K. Boucart, K. E. Moselund, V. Pott, D. Tsamados, ”Small slope micro/nano-electronic switches”, International Semiconductor Conference, CAS 2007, Sinaia, Romania, 15-17 Oct. 2007.
  • D. Tsamados, A.M. Ionescu, ”Suspended-gate MOSFET for low standby power switch and memory applications”, Second International Conference on Nano-Networks, Nanonets 2007, Catania, Italy, 24-26 Sept. 2007.
     

2006

Conference papers

  • Y. S. Chauhan, F. Krummenacher, C. Anghel, R. Gillon, B. Bakeroot, M. Declercq, A. M. Ionescu, ”Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs”, IEEE International Electron Device Meeting, IEDM 2006, San Francisco CA, December 2006.
  • N. Abelé, A. Villaret, A. Gangadharaiah, C. Gabioud, P. Ancey, A.M. Ionescu, ”1T MEMS Memory Based on Suspended Gate MOSFET”, IEEE International Electron Device Meeting, IEDM 2006, San Francisco CA, December 2006.
  • V. Pott, D. Bouvet, K. E. Moselund, A. M. Ionescu, “Carrier mobility in ultra-scaled gate-all-around silicon nanowires”, 2006 International Conference on Nano Science and Nano Technology, GJ-NST 2006, Gwangju, Korea, 7-8 Dec. 2006.
  • D. Tsamados, C. Anghel, A. M. Ionescu, ”Light-enhanced Hysteresis in Pentacene Field-effect Transistors”, 2006 International Conference on Nano Science and Nano Technology, GJ-NST 2006, Gwangju, Korea, 7-8 Dec. 2006.
  • C. Leroy, M. B. Pisani, R. Fritschi, C. Hibert, A. M. Ionescu, “High quality factor copper inductors on wafer-level quartz package for RF MEMS applications”, Proceedings of the 36th European Solid-State Devices Research Conference, ESSDERC 2006, pp. 190-193, Montreux, Switzerland, 19-21 Sept. 2006.
  • Y. S. Chauhan, C. Anghel, F. Krummenacher, A. M. Ionescu, M. Declercq, R. Gillon, S. Frere, B. Desoete, “A highly scalable high voltage MOSFET model”, Proceedings of the 36th European Solid-State Devices Research Conference, ESSDERC 2006, pp. 270-273, Montreux, Switzerland, 19-21 Sept. 2006.
  • A. S. Roy, Y. S. Chauhan, J. M. Sallese, C. C. Enz, A. M. Ionescu, M. Declercq, “Partioning scheme in lateral asymmetric MOST”, Proceedings of the 36th European Solid-State Devices Research Conference, ESSDERC 2006, pp. 307-310, Montreux, Switzerland, 19-21 Sept. 2006.
  • K. E. Moselund, D. Bouvet, L. Tschuor, V. Pott, P. Dainesi, A. M. Ionescu, “Local volume inversion and corner effects in triangular gate-all-around MOSFETs”, Proceedings of the 36th European Solid-State Devices Research Conference, ESSDERC 2006, pp. 359-362, Montreux, Switzerland, 19-21 Sept. 2006.
  • K. Boucart, A. M. Ionescu, “Double gate tunnel FET with ultrathin silicon body and high-k dielectric”, Proceedings of the 36th European Solid-State Devices Research Conference, ESSDERC 2006, pp. 383-386, Montreux, Switzerland, 19-21 Sept. 2006. (Young Scientist Award)
  • V. Pott, D. Bouvet, J. Boucart, L. Tschuor, K. E. Moselund, A. M. Ionescu, “Low temperature single electron characteristics in gate-all-around MOSFETs”, Proceedings of the 36th European Solid-State Devices Research Conference, ESSDERC 2006, pp. 427-430, Montreux, Switzerland, 19-21 Sept. 2006.
  • V. Pott, J. Boucart, D. Bouvet, K. E. Moselund, A. M. Ionescu, “Coulomb blockade in gate-all-around silicon nanowire MOSFETs”, Proceedings of IEEE 2006 silicon nanoelectronics workshop, VLSI 2006 workshop, pp. 25-26. Honolulu, Hawaii, 11-12 June 2006.
  • K. E. Moselund, L. Tschuor, D. Bouvet, V. Pott, P. Dainesi, C. Eggimann, N. Le Thomas, R. Houdré, A. M. Ionescu, “Co-integration of gate-all-around MOSFETs and local silicon-on insulator optical waveguides on bulk silicon for GHz on-chip optical signaling”, Proceedings of IEEE 2006 silicon nanoelectronics workshop, VLSI 2006 workshop, pp. 31-32, Honolulu, Hawaii, 11-12 June 2006.
  • C. Anghel, M. Manolescu, A. M. Ionescu, “Pentacene organic MOSFETs with Au and Pt bottom contacts”, International Semiconductor Conference, CAS 2006, Sinaia, Romania, October 2006.
  • N. Abelé, K. Séguéni, K. Boucart, F. Casset, L. Buchaillot, P. Ancey, A. M. Ionescu, “Ultra-low voltage MEMS resonator based on RSG-MOSFET”, MEMS 2006, pp. 882-885.
  • Y. S. Chauhan, C. Anghel, F. Krummenacher, R. Gillon, A. Baguenier, B. Desoete, S. Frere, A. M. Ionescu, M. Declercq, “A Compact DC and AC Model for Circuit Simulation of High Voltage VDMOS Transistor”, IEEE International Symposium on Quality Electronic Design, ISQED 2006, San Jose, USA, March 2006.
  • A. Mehdaoui, M. B. Pisani, R. Fritschi, P. Ancey, A. M. Ionescu, “Vertical co-integration of AlSi MEMS tunable capacitors and Cu inductors for tunable LC blocks”, MNE 2006, Barcelona, Spain, 17-20 September 2006.
  • C. Leroy, M. B. Pisani, C. Hibert, D. Bouvet, M. Puech, A. M. Ionescu, “High Quality Factor Copper Inductors Integrated in Deep Dry Etched Quartz Substrates”, Proceedings of the 2006 Symposium on Design, Test, Integration and Packaging of MEMS / MOEMS, DTIP 2006, Stresa, Italy, April 2006.
  • A. Mehdaoui, M. B. Pisani, D. Tsamados, F. Casset, P. Ancey, A. M. Ionescu, “MEMS Tunable Capacitor with Fragmented Electrodes and Rotational Electro-Thermal Drive”, Proceedings of the 2006 Symposium on Design, Test, Integration and Packaging of MEMS / MOEMS, DTIP 2006, Stresa, Italy, April 2006.
  • M. Fernández-Bolaños, P. Dainesi, A. Luque, J.M. Quero, A. M. Ionescu, “MEMS Capacitive Pressure Sensor Based on Polysilicon Sealed Membrane”, XX Eurosensors, vol. 2, pp. 456-457, Göteborg (Sweden), 17-20 Sept. 2006.
  • N.-D. Badila, C. Hibert, M. Mazza, A. M. Ionescu, “Fabrication of Silicon-On-Insulator MEM Resonators with Deep Sub-Micron Transduction Gaps”, Proceedings of the 2006 Symposium on Design, Test, Integration and Packaging of MEMS / MOEMS, DTIP 2006, Stresa, Italy, April 2006.
  • A. Mehdaoui, D. Tsamados, F. Casset, A. M. Ionescu, P. Ancey, “MEMS Tunable Capacitor with laterally driven fragmented electrodes and electro-thermal actuation”, MEMSWAVE 2006, Orvieto, Italy, 27-30 June 2006.
  • A. Luque, R. G. Bolea, M. Fernández-Bolaños, A. M. Ionescu, J. M. Quero, “Capacitive pressure microsensor fabricated by bulk micromachining and sacrificial layer etching”, 32nd Annual Conference on IEEE Industrial Electronics, IECON 2006, pp. 2969-2974, Paris, France, 7-10 Nov. 2006


Journal papers

  • Y. S. Chauhan, C. Anghel, F. Krummenacher, C. Maier, R. Gillon, B. Bakeroot, B. Desoete, S. Frere, A. Baguenier Desormeaux, A. Sharma et al., ”Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects”, Solid-State Electronics, vol. 50, iss. 11-12, pp 1801-1813, Nov.-Dec. 2006.
  • M. Fernández-Bolaños, N. Abelé, V. Pott, D. Bouvet, G. A. Racine, J. M. Quiero, A. M. Ionescu, “Polyimide sacrificial layer for SOI SG-MOSFET pressure sensor”, Microelectronic Engineering, vol. 83, pp. 1185-1188, 2006.
  • V. Pott, A. M. Ionescu, “Conduction in ultra-thin SOI nanowires prototyped by FIB milling”, Microelectronic Engineering, vol. 83, pp. 1718-1720, 2006.
  • S. Ecoffey, D. Bouvet, S. Mahapatra, G. Reimbold, A. M. Ionescu, “Electrical conduction in 10 nm thin polysilicon wires from 4 to 400 K and their operation for hybrid memory”, Japanese Journal of Applied Physics, Vol. 45, No. 6B, pp. 5461-5466, 2006.
  • C. Anghel, B. Bakeroot, Y. S. Chauhan, R. Gillon, C. Maier, P. Moens, J. Doutreloigne, A. M. Ionescu, “New Method for Threshold Voltage Extraction of High Voltage MOSFETs based on Gate-to-Drain Capacitance Measurement”, IEEE Electron Device Letters, Vol. 27, No. 7, pp. 602-604, July 2006.
  • K. E. Moselund, J. E. Freiermuth, P. Dainesi, A. M. Ionescu, “Experimental study of the process dependence of Mo, Cr, Ti, and W silicon Schottky diodes and contact resistance”, IEEE Transactions on Electron Devices, Pages 712-718, Volume 53, Issue 4, April 2006.
  • K. E. Moselund, P. Dainesi, M. Declercq, M. Bopp, P. Coronel, T. Skotnicki, A.M. Ionescu, “Compact gate-all-around silicon light modulator for ultra high speed operation”, Sensors and Actuators A: Physical, 2006.
  • J. Perruisseau-Carrier, R. Fritschi, P. Crespo-Valero, A.K. Skrivervik, “Modeling of periodic distributed MEMS-Application to the design of variable true-time delay lines”, IEEE Trans. Microwave Theory Tech. 54 (1), pp. 383-392, Jan. 2006.


Invited presentations

  • A. M. Ionescu, ”Hybrid CMOS – Single Electron Transistor Circuits: Promise or Dream?”, 2006 International Conference on Nano Science and Nano Technology, GJ-NST 2006, Gwangju, Korea, 7-8 Dec. 2006.
  • A. M. Ionescu, “Nano-scale ICT devices and systems”, Future and Emerging Technologies, IST Event 2006, Helsinki, Finland, 21-22 Nov. 2006. [-> more info]
  • V. Pott, D. Bouvet, K. E. Moselund, A. M. Ionescu, “Gate-all-around MOSFETs: true fabrication and characteristics”, SINANO workshop on silicon nanodevices, Beyond CMOS: Emerging devices, Aachen, Germany, 7-8 Nov. 2006.
  • S. Ecoffey, V. Pott, S. Mahapatra, D. Bouvet, A. M. Ionescu, “Hybrid Nanowire-MOS circuit architectures: from basic physics to digital and analog applications”, 6e Rencontres du Vietnam, Nanophysics 2006, Hanoi, Vietnam, 8-12 Aug. 2006.
     

2005

Conference papers

  • P. Dainesi, K. E. Moselund, M. Mazza, L. Thévenaz and A. M. Ionescu, ”Scaling SOI photonics to micron and sub-micron devices”, Proceedings of the SPIE, SPIE Irelend, Dublin, April 4 – 6, 2005.
  • P. Dainesi, K. E. Moselund, L. Thévenaz and A. M. Ionescu, ”Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator”, CLEO 2005, Conference on Lasers and Electro-Optics, Baltimore, May 22-27, Vol. 1, 110 – 112, 2005.
  • N. Abelé, R. Fritschi, K. Boucart, F. Casset, P. Ancey, A. M. Ionescu, ”Suspended-Gate MOSFET: bringing new MEMS functionality into solid-state transistor”, IEEE International Electron Device Meeting, IEDM 2005, Washington DC, USA, December 2005. (late news)
  • S. Ecoffey, M. Mazza, V. Pott, D. Bouvet, A. Schmid, Y. Leblebici, M.J. Declercq, A. M. Ionescu, ”A New Logic Family Based on Hybrid MOSFET-Polysilicon Nano-Wires”, IEEE International Electron Device Meeting, IEDM 2005, Washington DC, USA, December 2005.
  • S. Ecoffey, D. Bouvet, G. Reimbold, A. M. Ionescu, ”Electrical conduction in 10nm-thin polysilicon wires from 4K to 400K and their operation for hybrid memory”, 2005 International Microprocesses and Nanotechnology Conference, MNC 2005, Tokyo, Japan, October 26-28, 2005.
  • M. Mazza, Ph. Renaud, D. Bertrand, A. M. Ionescu, ”Tunable Oscillating CMOS Pixel for Subretinal Implants”, The 4th IEEE Conference on Sensors, IEEE Sensors 2005, Irvine, CA, USA, Oct 31st – Nov. 3rd, 2005.
  • V. Pott, A. M. Ionescu, ”Conduction in ultra-thin SOI nanowires prototyped by FIB milling”, 31st International Conference on Micro- and Nano-Engineering, MNE 2005, Vienna, Austria, 19 – 22 September 2005.
  • M. Fernández-Bolaños, N. Abelé, D. Bouvet, V. Pott, G. Racine, J. Quero, A. M. Ionescu, ”Polyimide sacrificial layer process for SOI SG-MOSFET pressure sensor”, 31st International Conference on Micro- and Nano-Engineering, MNE 2005, Vienna, Austria, 19 – 22 September 2005.
  • N. Hefyene, C. Anghel, R. Gillon, A. M. Ionescu, ”Hot carrier degradation of lateral DMOS transistor capacitance and reliability issues”, Proceedings of 43rd Annual IEEE International Reliability Physics Symposium, IRPS 2005, San José, USA, pp. 551 – 554 April 17-21, 2005.
  • K. E. Moselund, P. Dainesi, M. Declercq, M. Bopp, P. Coronel, T. Skotnicki, A. M. Ionescu, ”Compact gate-all-around silicon light modulator for ultra high speed operation” Digest of Technical Papers of the 13th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2005, Seoul, Korea, Volume 1, pp. 976 – 979, June 5-9, 2005.
  • S. Ecoffey, V. Pott, D. Bouvet, Y. Leblebici, M.J. Declercq, A. M. Ionescu, ”Fabrication of polysilicon gated-nanowires and their application for pA precision current measurements” Digest of Technical Papers of the 13th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2005, Seoul, Korea, Volume 1, pp. 859 – 862, June 5-9, 2005.
  • S. Ecoffey, V. Pott, D. Bouvet, M. Mazza, S. Mahapatra, A. Schmid, Y. Leblebici, M. J. Declercq, A. M. Ionescu, ”Nano-wires for room temperature operated hybrid CMOS-NANO integrated circuits”, Digest of Technical Papers IEEE International Solid-State Circuits Conference, ISSCC 2005, pp. 260 – 262 February 6-10, 2005.
  • V. Pott, D. Grogg, J. Brugger, A. M. Ionescu, “Silicon nanowires patterning by sidewall and nano-oxidation processing”, Nanoelectronics Days 2005, pp. 19-20, FZ Jülich GE, 9-11 Febr. 2005.
  • D. Grogg, C. Santschi, V. Pott, A. M. Ionescu, J. Brugger, “Nanostencil-based lithography for silicon nanowires fabrication”, Nanoelectronics Days 2005, pp. 33-34, FZ Jülich GE, 9-11 Febr. 2005.
  • S. Ecoffey, S. Mahapatra, V. Pott, D. bouvet, G. Reimbold, A. M. Ionescu, “Low temperature investigation of electrical conduction in polysilicon: simulation and experiment”, European Nano Systems, ENS 2005, Paris, France, December 2005.
  • A. M. Ionescu, “An outlook of technology scaling beyond Moore’s law”, Workshop on Nano-scale Systems and Technologies, SI Center EPFL 2005, Lausanne, Switzerland, 28 Sept. 2005.
  • R. Fritschi, N. Abelé, V. Pott, C. Hibert, Ph. Flückiger, P. Ancey and A. M. Ionescu, “RF MEMS switches for mobile communications : from metal-metal to suspended-gate MOS device architectures”, European Microwave Week, EuMW 2005, Paris la Défense, France, 2005. (invited)
  • N. Abelé, M. Fernández-Bolaños, R. Fritschi, F. Casset, P.Ancey, A. M. Ionescu, “AlSi-based Resonant Suspended-Gate MOSFET”, MEMSWAVE 2005, pp. 19-22, 2005.
  • M. Mazza, N.-D. Badila, A. M. Ionescu, “25.5 Mhz Silicon-on-insulator Bulk-mode Resonators: Design, Fabrication and Electrical Characterization”, MEMSWAVE 2005, 2005.
  • N. Abelé, V. Pott, K. Boucart, F. Casset, K. Séguéni, P. Ancey, A.M. Ionescu, “Electro-Mechanical Modeling of MEMS Resonators with MOSFET detection”, MSM 2005 (Nanotech), Vol. 3, pp. 553-556, 2005.
  • K. Buchheit, N. Abelé, A.M. Ionescu, “Design and Fabrication Issues in Ultra-Thin Film SOI MEMS resonators”, EuroSOI 2005, 2005.
  • C. Anghel, Y. S. Chauhan, N. Hefyene and A. M. Ionescu, “A Physical Analysis of High Voltage MOSFET Capacitance Behaviour”, IEEE International Symposium on Industrial Electronics, ISIE 2005, Dubrovnik, Croatia, June 2005.

    Journal papers
     

  • S. Mahapatra, A.M. Ionescu, ”Realization of Multiple Valued Logic and Memory by Hybrid SETMOS Architecture”, IEEE Transactions on Nanotechnology (TNANO), Volume: 4, Issue 6, pp. 705-714, November 2005.
  • N. Abelé, V. Pott, K. Boucart, F. Casset, K. Segueni, P. Ancey, A.M. Ionescu, ”Comparison of RSG-MOSFET and capacitive MEMS resonator detection”, IEE Electronics Letters, Volume: 41, Issue 5, pp. 242 – 244, March 2005.
  • M. Mazza, Ph. Renaud, D. Bertrand, A. M. Ionescu, ”CMOS pixels for subretinal implantable prothesis”, IEEE Sensors Journal, Volume: 5, Issue 1, pp. 32 – 37, February 2005.
  • S. Ecoffey, V. Pott, S. Mahapatra, D. Bouvet, P. Fazan, A. M. Ionescu, ”A hybrid CMOS-SET co-fabrication platform using nano-grain polysilicon wires”, Microelectronic Engineering, Volume: 78-79, pp. 239-343, January 2005.
     

2004

Conference papers

  • S. Ecoffey, V. Pott, S. Mahapatra, D. Bouvet, P. Fazan, A. M. Ionescu, “A Hybrid CMOS-SET co-fabrication Platform Using Nanograin Polysilicon Wires”, Proceedings of Micro and Engineering, MNE 2004, Rotterdam, September 2004.
  • S. Mahapatra, A. M. Ionescu, “A Novel Single Electron SRAM Architecture”, Proceedings of IEEE Conference on Nanotechnology, IEEE NANO 2004, Munich, August 2004.
  • A. Basu, L. Sheng-Chih, C. Wasshuber, A. M. Ionescu, K. Banerjee, “A comprehensive analytical capacitance model of a two dimensional nanodot array [cellular neural net application]”, Proceedings of 5th International Symposium on Quality Electronic Design, ISQED 2004, San Jose, pp. 259–264, March 2004.
  • A. Cruau, G. Lissorgues, P. Nicole, D. Placko, A. M. Ionescu, “V-shaped micromechanical tunable capacitor for RF applications”, Proceedings of Design, Test, Integration and Packaging of MEMS/MOEMS Symposium, DTIP 2004, Montreux, pp. 255-258, May 2004.
  • A. M. Ionescu, K. Buchheit, P. Dainesi, S. Ecoffey, S. Mahapatra, V. Pott, “Nanowires: a Realistic Approach for Future Hybrid Nanoelectronics ?” 3th NID Workshop, NID 2004, Athens, February 2004. (invited)
  • P. Dainesi, A. M. Ionescu, M. Mazza, L. Thévenaz, “Optics and electronics on the same Si substrate”, SPS Swiss physical society Annual meeting, SPS 2004, Neuchatel, 3-4 March 2004.
  • M. B. Pisani, C. Hibert, M. Pavius, D. Bouvet, P. Beaud, C. Dehollain, A.M. Ionescu, “High-Q Copper / Polyimide Inductors: Fabrication Results and Electrical Performance Analysis” Proceedings of the 5th Workshop on MEMS for Millimeter-Wave Communications, MEMSWAVE 2004, pp. I 9 – I 12, University of Uppsala, Sweden, Jun.-Jul. 2004.
  • J. Perruisseau-Carrier, R. Fritschi, P. Crespo Valero, C. Hibert, J.-F. Zürcher, Ph. Flückiger, A. Skrivervik, A. M. Ionescu, “Fabrication Process and Model for a MEMS Parallel-Plate Capacitor above CPW Line”5th Workshop on MEMS for Millimeter Wave Communications, MEMSWAVE 2004, Uppsala, Sweden, pp. C21-C24. June 30-July 2, 2004.
  • A. Mehdaoui, F. Casset, G. Bouche, P. Ancey, A.-M. Ionescu, “MEMS Tunable Capacitors With Fragmented Electrodes and Electro-Thermal Actuation”, 15th MicroMechanics European Workshop, MNE04 workshop, Leuven BE, sept. 2004.
  • A. M. Ionescu, V. Pott, S. Ecoffey, S. Mahapatra, K. Moselund, P. Dainesi, K. Buchheit, M. Mazza, “Emerging nanoelectronics: multi-functional nanowire”, International Semiconductor Conference, CAS 2004, Sinaia, Romania, October 2004. (invited)

    Journal papers
     

  • S. Mahapatra, Ch. Wasshuber, K. Banerjee, A. M. Ionescu, ”Analytical Modelling of Single Electron Transistor (SET) for SET- CMOS Hybrid Circuit Simulation”, IEEE Transactions on Electron Devices (TED), November 2004.
  • R. Fritschi, S. Frederico, C. Hibert, Ph. Fluckiger, Ph. Renaud, D. Tsamados, J. Boussey, A. Chovet, R.K.M. Ng, F. Udrea, J. Curty, C. Dehollain, M. Declercq, A. M. Ionescu, ”High tuning range AlSi RF MEMS capacitors fabricated with sacrificial amorphous silicon surface micromachining”, Microelectronic Engineering (Special Issue), Volume: 73-74, pp. 447-451, June 2004.
  • M. B. Pisani, C. Hibert, D. Bouvet, P. Beaud, A. M. Ionescu, ”Copper/polyimide fabrication process for above-IC integration of high quality factor inductors”, Microelectronic Engineering (Special Issue), Volume: 73-74, pp. 474-479 June 2004.
  • A. M. Ionescu, D. Munteanu, N. Hefyene, C. Anghel, ”Compact modeling of weak inversion generation transients in SOI MOSFETs”, Journal of the Electrochemical Society, Volume: 151 (6), pp. G396-G401, 2004.
  • A. M. Ionescu, S. Mahapatra, V. Pott, ”Hybrid CMOS-SET Architecture with Coulomb Blockade Oscillations and High Current Drive”, IEEE Electron Device Letters (EDL), Volume: 25, Issue: 6, pp. 411-413, June 2004.
  • M. Mazza, Ph. Renaud, D. Bertrand, A. M. Ionescu, ”CMOS pixels for subretinal implantable prothesis”, IEEE Sensors Journal, 2004.
  • C. Anghel, R. Gillon, A. M. Ionescu, ”Self-Heating Characterization and Extraction Method for Thermal Resistance and Capacitance in High Voltage MOSFETs”, IEEE Electron Device Letters (EDL), Volume: 25, Issue: 3, pp. 141-143, March 2004.
  • S. Mahapatra, A.M. Ionescu, ”A Novel Hybrid SET-CMOS Negative Differential Resistance Circuit”, Japanese Journal of Applied Physics (JJAP), Volume: 43, No. 2, pp. 538–539, February 2004.
  • D. Ziegler, P. Linderholm, M. Mazza, S. Ferazzutti, D. Bertrand, A. M. Ionescu, Ph. Renaud, ”An active microphotodiode array of oscillating pixels for retinal stimulation”, Sensors and Actuators A: Physical, Volume: 110, Issues 1-3, pp. 11-17, February 2004.
  • S. Mahapatra, V. Vaish, Ch. Wasshuber, K. Banerjee, A. M. Ionescu, “Analytical Modelling of Single Electron Transistor (SET) for Hybrid CMOS-SET Analog IC Design”, IEEE Transactions on Electron Device, Vol. 51, No. 11, pp. 1772-1782, 2004.
     

2003

Conference papers

  • S. Mahapatra, V. Pott, S. Ecoffey, C. Wasshuber, K. Banerjee, J. Tringe, M. Declercq, A. M. Ionescu, “SETMOS: a Novel True Hybrid SET-CMOS Cell with High Current and Coulomb Blockade for Future Nano-scale Analog ICs”, Technical Digest of IEEE International Electron Device Meeting, IEDM 2003, Washington DC, pp. 29.7.1 – 29.7.4, December 2003.
  • C. Anghel, N. Hefyene, R. Gillon, M. Tack, M. J. Declercq, A. M. Ionescu, “New Method for Temperature-Dependent Thermal Resistance and Capacitance Accurate Extraction in DMOS Transistors”, Technical Digest of IEEE International Electron Device Meeting, IEDM 2003, Washington DC, pp. 5.6.1 – 5.6.4, December 2003.
  • S. Mahapatra, K. Banerjee, F. Pegeon, A. M. Ionescu, “A CAD Framework for Co-Design and Analysis of CMOS-SET Hybrid Integrated Circuits”, Proceedings of International Conference on Computer-Aided Design, ICCAD 2003, San Jose, CA, USA, pp. 497-502, November 2003.
  • M. Mazza, Ph. Renaud, A. M. Ionescu, “CMOS pixel for subretinal implantable prothesis”, Proceedings of the 2nd IEEE International Conference on Sensors, IEEE Sensors 2003, Toronto, Canada, October 2003.
  • S. Mahapatra, V. Pott, A. M. Ionescu, “SETMOS-A High Current Coulomb Blockade Oscillation Device”, Proceedings of European Solid-State Devices Research Conference, ESSDERC 2003, Lisbon, Portugal, pp. 183-186, September 2003.
  • C. Anghel, N. Hefyene, R. Gillon, A. M. Ionescu, “Self-Heating Characterization and Extraction Method for Thermal Resistance and Capacitance in High Voltage MOSFETs”, Proceedings of European Solid-State Devices Research Conference, ESSDERC 2003, Lisbon, Portugal, pp. 449-452, September 2003.
  • M. B. Pisani, C. Hibert, D. Bouvet, P. Beaud, A. M. Ionescu, “Copper/polyimide fabrication process for above RF IC integration of high quality factor inductors”, Proceedings of Micro and Nano-engineering Conference, MNE 2003, Cambridge, UK, September 2003.
  • M. Mazza, L. Thevenaz, Ph. Robert, M. Declercq, A. M. Ionescu, “A Novel SOI Schottky Electro-optical Modulator for Ghz High-Speed Switching”, Proceedings of 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2003, Boston, USA, Volume: 2, 2003, pp. 1490 –1493, June 2003.
  • S. Federico, C. Hibert, R. Fritschi, Ph. Fluckiger, Ph. Renaud, A. M. Ionescu, ”Silicon Sacrificial Layer Dry Etching (SSLDE) for Free-Standing RF MEMS Architectures”, Proceedings of 16th Annual IEEE International Micro Electro Mechanical Systems Conference, MEMS 2003, Kyoto, Japan, pp. 570 –573, January 2003.
  • M. Mazza, D. Bertrand, P. Renaud, A.M. Ionescu, “CMOS Image Sensor for Subretinal Implant System”, IEEE International Semiconductor Conference, CAS 2003, Sinaia, Romania, 28 sept.-2oct. 2003.
  • R. Fritschi, S, Frédérico, C. Hibert, Ph. Flückiger, Ph Renaud, D. Tsamados, J. Boussey, A. Chovet, F. Udrea, J.-P. Curty, C. Dehollain, M. Declercq, A.M. Ionescu. “High Tunning Range AISi RF MEMS Capacitors Fabricated with Sacrificial Amorphous Silicon Surface Micromachining”, MNE Conference, MNE 2003, Cambridge UK, Sept. 2003.
  • M. B. Pisani, S. Bantas, C. Hibert, M. Trzmiel, C. Pissela, C. Dehollain, M. Declercq, A.M. Ionescu. “High-Q Inductors for 1-10 GHz Applications : Modeling, Simulation, Design and Fabrication” 4th Workshop on MEMS for MillimeterWAVE communications, MEMSWAVE 2003, pp B-7 to B-10, LAAS-CNRS, Toulouse, 2-4 July 2003.
  • S. Mahapatra, V. Pott, A. M. Ionescu, “Few Electron Negative Differential resistance (NDR) Devices” International Semiconductor Conference, CAS 2003, Sinaia, Romania, Vol. 1, pp. 51-54, September 2003. (best paper award)
  • C. Angel, N. Hefyene, M. Vermandel, B. Bakeroot, J. Doutreloigne, R. Gillon, A. M. Ionescu, “Electrical Characterisation of High Voltage MOSFETs using MESDRIFT” International Semiconductor Conference, CAS 2003, Sinaia, Romania, Vol. 2, pp.260-236, September 2003.
  • S. Ecoffey, D. Bouvet, P. Fazan, J. W. Tringe, A. M. Ionescu, “Novel Technique for Nanograin Ultra-Thin Polysilicon Film Deposition and Implantation” International Semiconductor Conference, CAS 2003, Sinaia, Romania, Vol. 1, pp. 47-50 , September 2003.
  • N.-D. Badila, S. Ecoffey, D.Bouvet, A. M. Ionescu, ”A Study of Fabrication Techniques for Sub-10nm Thin Undulated Polysilicon Films”, International Semiconductor Conference, CAS 2003, Sinaia, Romania, Vol. 1, pp. 95-98 , September 2003.
     

2002

Conference papers

  • S. Mahapatra, A. M. Ionescu, K. Banerjee, M. Declercq, ”Modelling and analysis of power dissipation in Single Electron logic”, Technical Digest of IEEE International Electron Device Meeting, IEDM 2002, San Francisco, USA, pp. 323 –326, December 2002.
  • A. Paraschiv-Ionescu, C. Jutten, A. M. Ionescu, ”Estimation of the source number using array discrete wavelet transform”, Proceedings of IEEE 28th Annual Conference of Industrial Electronics Society, IECON 2002, Sevilla, Spain, Volume: 2, pp. 1520 –1525, November 2002.
  • R. Fritschi, A. M. Ionescu, C. Hibert, Ph. Fluckiger, C. Dehollain, M. J. Declercq, Ph. Renaud, ”A Novel RF MEMS Technological Platform”, Proceedings of IEEE 28th Annual Conference of Industrial Electronics Society, IECON 2002, Sevilla, Spain, Volume: 4, pp. 3052 –3056, November 2002.
  • S. Mahapatra, A.M. Ionescu, K. Banerjee, ”Quasi-analytical modelling of drain current and conductance of Single Electron Transistors with MIB”, Proceedings of 32nd European Solid-State device Research Conference, ESSDERC 2002, Florence, Italy, pp. 391-394, September 2002.
  • C. Anghel, N. Hefyene, A. M. Ionescu, S. Frere, R. Gillon, J. Rhayem, ”Universal Test Structure and Characterization Method for Bias-Dependent Drift Series Resistance of HV MOSFETs”, Proceedings of 32nd European Solid-State device Research Conference, ESSDERC 2002, Florence, Italy, pp. 247-250, September 2002.
  • N. Hefyene, E. Vestiel, B. Bakeroot, C. Anghel, S. Frere, A.M. Ionescu, R. Gillon, ”Bias-dependent drift resistance modeling for accurate DC and AC simulation of asymmetric HV-MOSFET”, Proceedings of International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2002, Kobe, Japan, pp. 203 –206, September 2002.
  • D. Ziegler, S. Ferazzutti, D. Bertrand, A. M. Ionescu, Ph. Renaud, ”An Oscillating Active CMOS Pixel for Subretinal Stimulation”, Eurosensors XVI, Prague, Czech Republic, September 2002.
  • A. M. Ionescu. M. Declercq, S. Mahapatra, K. Banerjee, J. Gautier, ”Few Electron Devices: Towards Hybrid CMOS-SET Integrated Circuits”, Design Automation Conference, DAC 2002, June 10-14, 2002, New Orleans, Louisiana, USA, pp. 88-93, June 2002. (invited)
  • A. M. Ionescu, M. Declercq, S. Mahapatra, K. Banerjee, ”Teaching microelectronics in the silicon ICs showstopper zone: a course on ultimate devices and circuits: towards quantum electronics”, 4th European Workshop on Microelectronics Education, EWME 2002, Baiona, Spain, May 2002.
  • S. Mahapatra, A. M. Ionescu, K. Banerjee, M. J. Declercq, “A SET Quantizer Circuit Aiming at Digital Communication System”, IEEE International Symposium on Circuits and Systems, ISCAS 2002, Scottsdale, AZ, USA, Volume: 5, pp. V-860 -V-863, May 2002.
  • R. Fritschi, C. Hibert, Ph. Flückiger, A. M. Ionescu, ”Dry Etching Techniques of Amorphous Silicon for Suspended Metal Membrane RF MEMS Capacitors”, Proceedings of Material Research Symposium, MRS Spring Meeting 2002, San Francisco, CA, USA, April 2002.
  • A. M. Ionescu, V. Pott, R. Fritschi, K. Banerjee, M. J. Declercq, Ph. Renaud, C. Hibert, Ph. Fluckiger, G-A. Racine, “Modeling and Design of a Low-Voltage SOI Suspended-Gate MOSFET (SG-MOSFET) with a Metal-Over-Gate-Architecture”, Proceedings of IEEE International Symposium on Quality Electronic Design, ISQED 2002, San Jose, CA, USA, pp. 496 -501, March 2002.
  • P. Dainesi, A. M. Ionescu, L. Thevenaz, K. Banerjee, M. J. Declercq, Ph. Robert, Ph. Renaud, Ph. Fluckiger, C. Hibert, G-A. Racine, “3-D Integrable Optoelectronic Devices for Telecommunications ICs”, IEEE International Solid State Circuits Conference, ISSCC 2002, San Francisco, CA, February, 4-6, pp. 360-361, 2002.
  • N. Hefyene, J.M. Sallese, C. Anghel, A. M. Ionescu, S.F. Frere, R. Gillon, “EKV Compact Model Extension for HV Lateral DMOS Transistors”, ASDAM 2002, pp. 345-348, Smolenice Castle, Slovakia, 14-16 october 2002.

    Journal papers
     

  • A. M. Ionescu, ”RF MEMS for Mobile Communications Era – Present and Future”, Micro & Nanotechnology Journal, Volume: NMT 1-2, Eds. Hermes, France, pp. 230–258, 2002.
  • D. Munteanu, A. M. Ionescu, ”Modeling of drain current overshoot and recombination lifetime extraction in floating-body submicron SOI MOSFETs”, IEEE Transactions on Electron Devices (TED), Volume: 49, Issue: 7, pp. 1198-1205, July 2002.
  • S. Mahapatra, A. M. Ionescu, K. Banerjee, ”A Quasi-Analytical SET Model for Few Electron Circuit Simulation”, IEEE Electron Device Letters (EDL), Volume: 23, Issue: 6, pp. 366-368, June 2002.
  • S. Mahapatra, A. M. Ionescu, K. Banerjee, M. Declercq, ”A SET Based Quantizer Circuit for Digital Communications”, Electronics Letters, Volume: 38, Issue: 10, pp. 443-445, May 2002.
  • S. Ecoffey, D. Bouvet, A. M. Ionescu, P. Fazan, “LPCVD deposition of nanograin polysilicon ultra-thin films”, Journal of Nanotechnology, Volume: 13, Issue: 3, pp. 290-293, June 2002.
     

1999 – 2000 – 2001

Conference papers

  • S. Ecoffey, D. Bouvet, A. M. Ionescu, P. Fazan, “LPCVD deposition techniques for nanograin sub-10nm polysilicon ultra-thin films”, MRS Fall Meeting 2001, Boston, MA, USA, MRS Proceedings, Volume: 686, 2001.
  • P. Dainesi, L. Thevenaz, Ph. Fluckiger, C. Hibert, G. Racine, Ph. Robert, Ph. Renaud, A.M. Ionescu, M. Declercq, ”A novel CMOS SOI unbalanced Mach-Zehnder interferometer: from design and simulations to fabrication and characterization”, International IEEE SOI Conference 2001, USA, pp. 137 -138, October 2001.
  • A. M. Ionescu, “MEMS for reconfigurable wide-band RF ICs”, Proceedings of SBMICRO 2001, Pirenopolis, Brazil, September 2001. (invited)
  • C. Anghel, N. Hefyene, A. M. Ionescu, M. Vermandel, B. Bakeroot, J. Doutreloigne, R. Gillon, S. Frere, C. Maier, Y. Mourier, “Investigations and Physical Modelling of Saturation Effects in Lateral DMOS Transistor Architectures Based on the Concept of Intrinsic Drain Voltage”, Proceedings of the 31 European Solid-State device Research Conference, ESSDERC 2001, Nuremberg, Germany, September 2001.
  • N. Hefyene, C. Anghel, A.M. Ionescu, S. Frere, R. Gillon, M. Vermandel, B. Bakeroot, J. Doutreloigne, “An experimental approach for bias-dependent drain series resistances evaluation in asymmetric HV MOSFETs”, Proceedings of the 31 European Solid-State device Research Conference, ESSDERC 2001, Nuremberg, Germany, September 2001.
  • V. Pott, A. M. Ionescu, R. Fritschi, C. Hibert, Ph. Fluckiger, G.A. Racine, M. Declercq, Ph. Renaud, A. Rusu, D. Dobrescu, L. Dobrescu, ”The suspended-gate MOSFET (SG-MOSFET): a modeling outlook for the design of RF MEMS switches and tunable capacitors”, Proceedings of IEEE International Annual Semiconductor Conference, CAS 2001, Sinaia, Romania, Volume: 1, pp. 137-140, October 2001.
  • C. Anghel, N. Hefyene, A. M. Ionescu, M. Vermandel, B. Bakeroot, J. Doutreloigne, R. Gillon, S. Frere, C. Maier, Y. Mourier, “Physical modelling strategy for (quasi-) saturation effects in lateral dmos transistor based on the concept of intrinsic drain voltage”, Proceedings of IEEE International Annual Semiconductor Conference, CAS 2001, Sinaia, Romania, Volume: 2, pp. 417 –420, October 2001.
  • L. Dobrescu, M. Brezeanu, A. Rusu, A. M. Ionescu, “On the limit between subthreshold and strong inversion regions in the EKV model using the nonlinear electrical conduction theorem”, Proceedings of IEEE International Annual Semiconductor Conference, CAS 2001, Volume: 2, pp. 421 –424, October 2001.
  • A. M. Ionescu, J.W. Tringe, A. Chovet, J. Plummer, “On a Novel Technique for the Electrical Characterization of Polycrystalline Silicon”, Proceedings of the 30 European Solid-State Device Research Conference, ESSDERC 2000, pp. 420-423, Cork Ireland, 11-13 September 2000.
  • C. Anghel, N. Hefyene, A. M. Ionescu, M. Declercq, J.W. Tringe, J.D. Plummer, “Pseudo-MOS Operation of Ultra-Narrow Polycrystalline Silicon Wires : Electrical Characterization and Memory Effects”, Proc. MRS Fall Meeting, Symposium F, MRS 2000, Boston, MA, Nov 27-Dec 2001.
  • L. Michelutti, J. M. Terrot, A. Chovet, A. Ionescu, “1/f Noise in Polycrystalline Silicon Thin Films Versus Technological Parameters”, IEEE 15th Intern. Conference on Noise in Physical Systems and 1/f Fluctuations, ICNF 1999, pp.122-124, Hong Kong, 23-26 August 1999.

    Journal papers

     
  • L. Michelutti, A. Chovet, J. Stoemenos , J.M.Terrot, A. M. Ionescu, “Polycrystalline silicon thin films for microsystems:correlation between technological parameters, film structure and electrical properties”, Journal of Thin Solid Films, Volume: 401, pp. 235–242, 2001.
  • A. M. Ionescu, D. Munteanu, “A novel in-situ SOI characterization technique: the intrinsic point-probe MOSFET”, IEEE Electron Device Letters (EDL), Volume: 22, Issue: 4, pp. 166 –169, April 2001.
  • P. Dainesi, A. Kung, M. Chabloz, A. Lagos, P. Fluckiger, A. M. Ionescu, M. Declercq, Ph. Renaud, Ph. Robert, “CMOS compatible fully integrated Mach-Zender interferometer in SOI technology”, IEEE Photonics Technology Letters, Volume: 12, Issue: 6, pp. 660-662, June 2000.
  • A. M. Ionescu, A. Chovet, “Sub-band-gap impact ionization events in transient regimes of floating body SOI devices”, Microelectronic Engineering, Volume: 48 (1-4), pp. 371-374, September 1999.